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GoChip Elec Tech Shanghai GH43F Hall Effect Sensor with Long Lifespan and Fast Switching Performance

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GoChip Elec Tech Shanghai GH43F Hall Effect Sensor with Long Lifespan and Fast Switching Performance

Operating Current : 4mA

Operation Points : 20mT

Release Points : 17mT

Operating Temperature : -40℃~+150℃

Voltage - Supply : 3.8V~30V

Description : Digital Switch Unipolar Open Collector Hall Effect TO-92S

Mfr. Part # : GH43F

Model Number : GH43F

Package : TO-92S

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GH143F Single-Pole Switch Hall Position Sensor

The GH143F series is a high-temperature unipolar Hall effect integrated sensor designed for consumer and industrial electronic products. It features a wide operating voltage range, high output current, fast switching speed without jitter, wide operating frequency, long lifespan, compact size, and easy installation. It can directly interface with logic circuits. The sensor comprises an internal voltage regulator, Hall voltage generator, differential amplifier, temperature compensation unit, Schmitt trigger, and an open-collector output stage. It operates with a single magnetic pole and is suitable for use with rectangular or cylindrical magnets. The GH143F operates from -40 to 150 with a supply voltage range of 3.8V to 30V and a load current capability of up to 50mA, packaged in a SIP3L (TO-92S) form factor.

Product Attributes

Brand: GOCHIP ELECTRONICS TECHNOLOGY (Shanghai) CO., LTD.
Origin: China
Model Series: GH143F
Version: 1.0
Release Date: February 29, 2016

Technical Specifications

Product Model	Temperature Range	Package Type	Operating Voltage Range	Magnetic Field Type	Order Quantity	Status
GH143FLUA	L (-40~150)	UA (SIP-3L TO-92S)	3.8-30V	Unipolar	1000 pcs/bag	Mass Production

Parameter	Symbol	Min	Typical	Max	Unit	Notes
Power Supply Voltage	Vcc	3.8		30	V	Normal Operation
Output Low Voltage	VOL		150	250	mV	Iout=25mA, B>BOP
Output Low Voltage	VOL		350	500	mV	Iout=45mA, B>BOP
Output High Leakage Current	IOH			10	A	Vout=30V, B<BRP
Supply Current	ICC		4.0	10	mA	Output Open
Output Rise Time	TR		0.2		S	RL=820, CL=20PF
Output Fall Time	TF		0.5		S	RL=820, CL=20PF
Operating Point	BOP	70		200	Gauss,GS
Release Point	BRP	50		170	Gauss,GS
Hysteresis	BHYS	20	50	80	Gauss,GS

Parameter	Symbol	Value	Unit
Power Supply Voltage	Vcc	-30 ~ +40	V
Magnetic Flux Density	B	Unlimited	Gauss
Output Reverse Breakdown Voltage	VCE	-40	V
Output Low Level Current	IOL	50	mA
Maximum Power Dissipation	PD	450	mW
Operating Temperature Range	To	-40 ~ +150
Maximum Junction Temperature	TJ	+150
Storage Temperature	TS	-65 ~ +170

2101221940_GoChip-Elec-Tech--Shanghai-GH43F_C2683243.pdf

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